ds21218 rev. d-2 1 of 2 GBJ10005-gbj1010 www.diodes.com diodes incorporated features glass passivated die construction high case dielectric strength of 1500v rms low reverse leakage current surge overload rating to 170a peak ideal for printed circuit board applications plastic material - ul flammability classification 94v-0 ul listed under recognized component index, file number e94661 single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified GBJ10005 - gbj1010 10a glass passivated bridge rectifier case: molded plastic terminals: plated leads, solderable per mil-std-202, method 208 polarity: molded on body mounting: through hole for #6 screw mounting torque: 5.0 in-lbs maximum weight: 6.6 grams (approx.) marking: type number mechanical data gbj dim min max a 29.70 30.30 b 19.70 20.30 c 17.00 18.00 d 3.80 4.20 e 7.30 7.70 g 9.80 10.20 h 2.00 2.40 i 0.90 1.10 j 2.30 2.70 k 3.0 x 45 l 4.40 4.80 m 3.40 3.80 n 3.10 3.40 p 2.50 2.90 r 0.60 0.80 s 10.80 11.20 all dimensions in mm _ b c d ee g h k j i l m n p r s a characteristic symbol gbj 10005 gbj 1001 gbj 1002 gbj 1004 gbj 1006 gbj 1008 gbj 1010 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average forward rectified output current @ t c = 110 c i o 10 a non-repetitive peak forward surge current, 8.3 ms single half-sine-wave superimposed on rated load (jedec method) i fsm 170 a forward voltage per element @ i f = 5.0a v fm 1.05 v peak reverse current @t c = 25 c at rated dc blocking voltage @ t c = 125 c i r 10 500 a i 2 t rating for fusing (t < 8.3ms) (note 1) i 2 t 120 a 2 s typical junction capacitance per element (note 2) c j 55 pf typical thermal resistance, junction to case (note 3) r jc 1.4 c/w operating and storage temperature range t j ,t stg -65 to +150 c notes: 1. non-repetitive, for t > 1.0ms and < 8.3ms. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v dc. 3. thermal resistance from junction to case per element. unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
ds21218 rev. d-2 2 of 2 GBJ10005-gbj1010 www.diodes.com 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 1.8 v , instantaneous forward voltage (v) f fi g .2 t y pical forward characteristics ( per element ) i , instantaneous forward current (a) f t= 25 c j 0 40 80 120 160 180 1 10 100 i , peak fwd surge current (a) fsm number of cycles at 60 hz fi g . 3 maximum non-repetitive sur g e current t = 150 c j single half-sine-wave (jedec method) 10 100 1 1 10 100 c , junction capacitance (pf) j v , reverse voltage (v) r fig. 4 typical junction capacitance f = 1mhz t = 25 c j 0.1 1.0 10 100 1000 02040 6080 100 120 140 percent of rated peak reverse voltage (%) fi g . 5 t yp ical reverse characteristics t = 150 c j t = 125 c j t = 100 c j t = 25 c j 0 2 4 6 8 10 12 25 50 75 100 125 150 i , average rectified current (a) o t , case temperature ( c) c fi g . 1 forward current deratin g curve resistive or inductive load with heatsink without heatsink
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